Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays SQJQ900E-T1_GE3

Description
Win Source Part Number: 1278522-SQJQ900E-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power - Max: 75W Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJQ900E-T1_GE3DKR,S QJQ900E-T1_GE3TR,SQJ Q900E-T1_GE3CT Base Product Number: SQJQ900
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Description
Win Source Part Number: 1278522-SQJQ900E-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power - Max: 75W Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJQ900E-T1_GE3DKR,S QJQ900E-T1_GE3TR,SQJ Q900E-T1_GE3CT Base Product Number: SQJQ900
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1278522-SQJQ900E-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1278522-SQJQ900E-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1278522-SQJQ900E-T1_GE3
Win Source Part Number: 1278522-SQJQ900E-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power - Max: 75W Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJQ900E-T1_GE3DKR,S QJQ900E-T1_GE3TR,SQJ Q900E-T1_GE3CT Base Product Number: SQJQ900

Win Source Part Number: 1278522-SQJQ900E-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 75W
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJQ900E-T1_GE3DKR,SQJQ900E-T1_GE3TR,SQJQ900E-T1_GE3CT
Base Product Number: SQJQ900

Buy Now Datasheet
Singapore
N-Channel 60A 40V 0.0039ohm MOSFET Transistor
278-SQJQ900E-T1_GE3
N-Channel 60A 40V 0.0039ohm MOSFET Transistor 278-SQJQ900E-T1_GE3
Power Field-Effect Transistor, 60A I(D), 40V, 0.0039ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SQJQ900E-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60A, 40V, 0.0039ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60A, 40V, 0.0039ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ900E-T1_GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 60A I(D), 40V, 0.0039ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SQJQ900E-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60A, 40V, 0.0039ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60A, 40V, 0.0039ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ900E-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SQJQ900E-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQJQ900E-T1_GE3CT-ND
FET, MOSFET Arrays SQJQ900E-T1_GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual

Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SQJQ900E-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQJQ900E-T1_GE3DKR-ND
FET, MOSFET Arrays SQJQ900E-T1_GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual

Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SQJQ900E-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQJQ900E-T1_GE3TR-ND
FET, MOSFET Arrays SQJQ900E-T1_GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual

Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SQJQ900E-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SQJQ900E-T1_GE3
FET, MOSFET Arrays SQJQ900E-T1_GE3
MOSFET 2 N-CH 40V POWERPAK8X8

MOSFET 2 N-CH 40V POWERPAK8X8

Supplier's Site Datasheet
Mosfet, Dual, N-Ch, 40V, Powerpak 8 X 8L Rohs Compliant Vishay - 57AJ0703 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 40V, Powerpak 8 X 8L Rohs Compliant Vishay
57AJ0703
Mosfet, Dual, N-Ch, 40V, Powerpak 8 X 8L Rohs Compliant Vishay 57AJ0703
MOSFET, DUAL, N-CH, 40V, POWERPAK 8 X 8L ROHS COMPLIANT: YES

MOSFET, DUAL, N-CH, 40V, POWERPAK 8 X 8L ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJQ900E-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJQ900E-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJQ900E-T1_GE3
MOSFET 2N-CH 40V 100A PPAK8X8

MOSFET 2N-CH 40V 100A PPAK8X8

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1278522-SQJQ900E-T1_GE3 278-SQJQ900E-T1_GE3 SQJQ900E-T1_GE3CT-ND SQJQ900E-T1_GE3 57AJ0703 SQJQ900E-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays N-Channel 60A 40V 0.0039ohm MOSFET Transistor FET, MOSFET Arrays FET, MOSFET Arrays Mosfet, Dual, N-Ch, 40V, Powerpak 8 X 8L Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
Package Type SOT3 PowerPAK® 8 x 8 Dual PowerPAK® 8 x 8 Dual TO-3 Automotive
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Transistor Grade / Operating Range Automotive
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