Power Field-Effect Transistor, 60A I(D), 40V, 0.0039ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SQJQ900E-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60A, 40V, 0.0039ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60A, 40V, 0.0039ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ900E-T1_GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual
Win Source Part Number: 1278522-SQJQ900E-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 75W
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJQ900E-T1_GE3DKR,S
Base Product Number: SQJQ900
MOSFET, DUAL, N-CH, 40V, POWERPAK 8 X 8L ROHS COMPLIANT: YES
MOSFET 2N-CH 40V 100A PPAK8X8
MOSFET 2 N-CH 40V POWERPAK8X8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJQ900E-T1_GE3 | SQJQ900E-T1_GE3CT-ND | 1278522-SQJQ900E-T1_GE3 | 57AJ0703 | SQJQ900E-T1_GE3 | SQJQ900E-T1_GE3 |
| Product Name | N-Channel 60A 40V 0.0039ohm MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Mosfet, Dual, N-Ch, 40V, Powerpak 8 X 8L Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | PowerPAK® 8 x 8 Dual | SOT3 | TO-3 | Automotive | PowerPAK® 8 x 8 Dual | |
| Transistor Grade / Operating Range | Automotive | |||||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) |
