Vishay Precision Group Single FETs, MOSFETs SQJQ466E-T1_GE3

Description
N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
Request a Quote Datasheet
Description
N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQJQ466E-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJQ466E-T1_GE3CT-ND
Single FETs, MOSFETs SQJQ466E-T1_GE3CT-ND
N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
Single FETs, MOSFETs - SQJQ466E-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJQ466E-T1_GE3TR-ND
Single FETs, MOSFETs SQJQ466E-T1_GE3TR-ND
N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
Single FETs, MOSFETs - SQJQ466E-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJQ466E-T1_GE3DKR-ND
Single FETs, MOSFETs SQJQ466E-T1_GE3DKR-ND
N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1005979-SQJQ466E-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1005979-SQJQ466E-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1005979-SQJQ466E-T1_GE3
Win Source Part Number: 1005979-SQJQ466E-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 150W (Tc) Package / Case: PowerPAK® 8 x 8 Supplier Device Package: PowerPAK® 8 x 8 Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10210 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJQ466E-T1 GE3,SQJQ466E-T1_GE3D KR,SQJQ466E-T1_GE3CT ,SQJQ466E-T1_GE3TR Base Product Number: SQJQ466 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1005979-SQJQ466E-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10210 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJQ466E-T1 GE3,SQJQ466E-T1_GE3DKR,SQJQ466E-T1_GE3CT,SQJQ466E-T1_GE3TR
Base Product Number: SQJQ466
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
60V 200A MOSFET Transistor
278-SQJQ466E-T1_GE3
60V 200A MOSFET Transistor 278-SQJQ466E-T1_GE3
MOSFET N-CH 60V 200A PPAK 8 X 8 Product overview: SQJQ466E-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 200A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 200A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ466E-T1_GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 200A PPAK 8 X 8 Product overview: SQJQ466E-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 200A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 200A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ466E-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V Vds PowerPAK AEC-Q101 Qualified

MOSFET 60V Vds PowerPAK AEC-Q101 Qualified

Buy Now Datasheet
Single FETs, MOSFETs - SQJQ466E-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJQ466E-T1_GE3
Single FETs, MOSFETs SQJQ466E-T1_GE3
MOSFET N-CH 60V 200A PPAK 8 X 8

MOSFET N-CH 60V 200A PPAK 8 X 8

Supplier's Site Datasheet
Mosfet, Aec-Q101, N-Ch, 60V, Powerpak; Transistor Polarity Vishay - 15AC8694 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 60V, Powerpak; Transistor Polarity Vishay
15AC8694
Mosfet, Aec-Q101, N-Ch, 60V, Powerpak; Transistor Polarity Vishay 15AC8694
MOSFET, AEC-Q101, N-CH, 60V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 60V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJQ466E-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJQ466E-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJQ466E-T1_GE3
MOSFET N-CH 60V 200A PPAK 8 X 8

MOSFET N-CH 60V 200A PPAK 8 X 8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQJQ466E-T1_GE3CT-ND 1005979-SQJQ466E-T1_GE3 278-SQJQ466E-T1_GE3 SQJQ466E-T1_GE3 SQJQ466E-T1_GE3 15AC8694 SQJQ466E-T1_GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 60V 200A MOSFET Transistor MOSFET Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 60V, Powerpak; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
Package Type PowerPAK® 8 x 8 SOT3 Tape & Reel (TR) PowerPAK® 8 x 8 TO-3 PowerPAKR 8 x 8
Transistor Grade / Operating Range Automotive
PD 150000 milliwatts 150 milliwatts 150000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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