MOSFET N-CH 60V 200A PPAK 8 X 8 Product overview: SQJQ466E-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 200A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 200A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ466E-T1_GE3 can be used for catalog matching and distributor lookup.
N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
Win Source Part Number: 1005979-SQJQ466E-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10210 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJQ466E-T1 GE3,SQJQ466E-T1_GE3D
Base Product Number: SQJQ466
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 60V 200A PPAK 8 X 8
MOSFET 60V Vds PowerPAK AEC-Q101 Qualified
MOSFET, AEC-Q101, N-CH, 60V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 200A PPAK 8 X 8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQJQ466E-T1_GE3 | SQJQ466E-T1_GE3CT-ND | 1005979-SQJQ466E-T1_GE3 | SQJQ466E-T1_GE3 | SQJQ466E-T1_GE3 | 15AC8694 | SQJQ466E-T1_GE3 |
| Product Name | 60V 200A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 60V, Powerpak; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 150 milliwatts | 150000 milliwatts | 150000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | Tape & Reel (TR) | PowerPAK® 8 x 8 | SOT3 | PowerPAK® 8 x 8 | TO-3 | PowerPAKR 8 x 8 |
