N-Channel MOSFET, 30V, 10A, Low Rds(on) Product overview: SQJQ410EL-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ410EL-T1_GE3
Win Source Part Number: 1095814-SQJQ410EL-T1
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQJQ410EL-T1_GE3SQJQ
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJQ410EL-T1_GE3CT,S
Base Product Number: SQJQ410
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 100V 135A (Tc) 136W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 100V 135A (Tc) 136W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 100V 135A (Tc) 136W (Tc) Surface Mount PowerPAK® 8 x 8
MOSFET N-CH 100V 135A PPAK 8 X 8
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
MOSFET, N-CH, 100V, 135A, POWERPAK ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJQ410EL-T1_GE3 | 1095814-SQJQ410EL-T1_GE3 | SQJQ410EL-T1_GE3TR-ND | SQJQ410EL-T1_GE3 | SQJQ410EL-T1_GE3 | 57AJ0702 |
| Product Name | N-Channel 30V 10A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 135A, Powerpak Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | ||||
| PD | 136000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) |
