SQJQ404E-T1_GE3 Vishay MOSFETs Transistor N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK T/R - Arrow.com Product overview: SQJQ404E-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 40V, 200A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 40V, 200A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ404E-T1_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277792-SQJQ404E-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.72mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16480 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJQ404E-T1_GE3DKR,S
Base Product Number: SQJQ404
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
MOSFET N-CH 40V 200A PPAK 8 X 8
MOSFET 40V Vds 20V Vgs PowerPAK 8 x 8L
MOSFET N-CH 40V 200A PPAK 8 X 8
MOSFET, N-CH, 40V, 200A, 175DEG C, 150W; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00133ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJQ404E-T1_GE3 | 1277792-SQJQ404E-T1_GE3 | SQJQ404E-T1_GE3DKR-ND | SQJQ404E-T1_GE3 | SQJQ404E-T1_GE3 | SQJQ404E-T1_GE3 | 81AC2817 |
| Product Name | Automotive 40V 200A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 200A, 175Deg C, 150W; Transistor Polarity Vishay |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 150000 milliwatts | 150000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | Tape and Reel | SOT3 | PowerPAK® 8 x 8 | PowerPAK® 8 x 8 | PowerPAKR 8 x 8 | TO-3 |
