Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQJQ404E-T1_GE3

Description
Win Source Part Number: 1277792-SQJQ404E-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.72mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 150W (Tc) Package / Case: PowerPAK® 8 x 8 Supplier Device Package: PowerPAK® 8 x 8 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16480 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJQ404E-T1_GE3DKR,S QJQ404E-T1_GE3TR,SQJ Q404E-T1_GE3CT Base Product Number: SQJQ404 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet
Description
Win Source Part Number: 1277792-SQJQ404E-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.72mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 150W (Tc) Package / Case: PowerPAK® 8 x 8 Supplier Device Package: PowerPAK® 8 x 8 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16480 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJQ404E-T1_GE3DKR,S QJQ404E-T1_GE3TR,SQJ Q404E-T1_GE3CT Base Product Number: SQJQ404 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277792-SQJQ404E-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277792-SQJQ404E-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277792-SQJQ404E-T1_GE3
Win Source Part Number: 1277792-SQJQ404E-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.72mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 150W (Tc) Package / Case: PowerPAK® 8 x 8 Supplier Device Package: PowerPAK® 8 x 8 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16480 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJQ404E-T1_GE3DKR,S QJQ404E-T1_GE3TR,SQJ Q404E-T1_GE3CT Base Product Number: SQJQ404 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277792-SQJQ404E-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.72mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16480 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJQ404E-T1_GE3DKR,SQJQ404E-T1_GE3TR,SQJQ404E-T1_GE3CT
Base Product Number: SQJQ404
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore, Singapore
Automotive 40V 200A MOSFET Transistor
278-SQJQ404E-T1_GE3
Automotive 40V 200A MOSFET Transistor 278-SQJQ404E-T1_GE3
SQJQ404E-T1_GE3 Vishay MOSFETs Transistor N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK T/R - Arrow.com Product overview: SQJQ404E-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 40V, 200A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 40V, 200A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ404E-T1_GE3 can be used for catalog matching and distributor lookup.

SQJQ404E-T1_GE3 Vishay MOSFETs Transistor N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK T/R - Arrow.com Product overview: SQJQ404E-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 40V, 200A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 40V, 200A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJQ404E-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQJQ404E-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJQ404E-T1_GE3DKR-ND
Single FETs, MOSFETs SQJQ404E-T1_GE3DKR-ND
N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
Single FETs, MOSFETs - SQJQ404E-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJQ404E-T1_GE3CT-ND
Single FETs, MOSFETs SQJQ404E-T1_GE3CT-ND
N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
Single FETs, MOSFETs - SQJQ404E-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJQ404E-T1_GE3TR-ND
Single FETs, MOSFETs SQJQ404E-T1_GE3TR-ND
N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
Mosfet, N-Ch, 40V, 200A, 175Deg C, 150W; Transistor Polarity Vishay - 81AC2817 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 200A, 175Deg C, 150W; Transistor Polarity Vishay
81AC2817
Mosfet, N-Ch, 40V, 200A, 175Deg C, 150W; Transistor Polarity Vishay 81AC2817
MOSFET, N-CH, 40V, 200A, 175DEG C, 150W; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00133ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 40V, 200A, 175DEG C, 150W; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00133ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJQ404E-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJQ404E-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJQ404E-T1_GE3
MOSFET N-CH 40V 200A PPAK 8 X 8

MOSFET N-CH 40V 200A PPAK 8 X 8

Supplier's Site
Single FETs, MOSFETs - SQJQ404E-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJQ404E-T1_GE3
Single FETs, MOSFETs SQJQ404E-T1_GE3
MOSFET N-CH 40V 200A PPAK 8 X 8

MOSFET N-CH 40V 200A PPAK 8 X 8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 40V Vds 20V Vgs PowerPAK 8 x 8L

MOSFET 40V Vds 20V Vgs PowerPAK 8 x 8L

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277792-SQJQ404E-T1_GE3 278-SQJQ404E-T1_GE3 SQJQ404E-T1_GE3DKR-ND 81AC2817 SQJQ404E-T1_GE3 SQJQ404E-T1_GE3 SQJQ404E-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Automotive 40V 200A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 40V, 200A, 175Deg C, 150W; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SOT3 Tape and Reel PowerPAK® 8 x 8 TO-3 PowerPAKR 8 x 8 PowerPAK® 8 x 8
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts 40 volts
PD 150000 milliwatts 150000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2953 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Package Type Die
Power Gain 18.2 dB
View Details
2 suppliers
Single FETs, MOSFETs - AUIRFU3607-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA
Transistor Grade / Operating Range Automotive
View Details
5 suppliers