Automotive AEC-Q101 Dual N-Channel 100 V MOSFET Product overview: SQJB70EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, Dual, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, Dual, 100 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJB70EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET 2 N-CH 100V POWERPAK SO8
Manufacturer: Vishay Siliconix
Win Source Part Number: 1324670-SQJB70EP-T1_
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power - Max: 27W (Tc)
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SQJB70EP-T1_GE3CT,SQ
Base Product Number: SQJB70
RoHS Status: ROHS3 Compliant
Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual
MOSFET Dual N-Ch 100V AEC-Q101 Qualified
MOSFET 2N-CH 100V 11.3A PPAK SO8
MOSFET, DUAL N-CH, 100V, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; PowerRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJB70EP-T1_GE3 | SQJB70EP-T1_GE3 | 1324670-SQJB70EP-T1_GE3 | SQJB70EP-T1_GE3TR-ND | SQJB70EP-T1_GE3 | SQJB70EP-T1_GE3 | 28AC3078 |
| Product Name | Automotive N-Channel Dual 100 V MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 100V, Powerpak So; Transistor Polarity Vishay |
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 27000 milliwatts | ||||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| IDSS | 11300 milliamps | 11300 milliamps |
