Vishay Precision Group FET, MOSFET Arrays SQJB70EP-T1_GE3

Description
Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SQJB70EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQJB70EP-T1_GE3TR-ND
FET, MOSFET Arrays SQJB70EP-T1_GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SQJB70EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQJB70EP-T1_GE3CT-ND
FET, MOSFET Arrays SQJB70EP-T1_GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SQJB70EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SQJB70EP-T1_GE3DKR-ND
FET, MOSFET Arrays SQJB70EP-T1_GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SQJB70EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SQJB70EP-T1_GE3
FET, MOSFET Arrays SQJB70EP-T1_GE3
MOSFET 2 N-CH 100V POWERPAK SO8

MOSFET 2 N-CH 100V POWERPAK SO8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1324670-SQJB70EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1324670-SQJB70EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1324670-SQJB70EP-T1_GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 1324670-SQJB70EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power - Max: 27W (Tc) Supplier Device Package: PowerPAK® SO-8 Dual Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: PowerPAK® SO-8 Dual ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: SQJB70EP-T1_GE3CT,SQ JB70EP-T1_GE3TR,SQJB 70EP-T1_GE3DKR Base Product Number: SQJB70 RoHS Status: ROHS3 Compliant

Manufacturer: Vishay Siliconix
Win Source Part Number: 1324670-SQJB70EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power - Max: 27W (Tc)
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SQJB70EP-T1_GE3CT,SQJB70EP-T1_GE3TR,SQJB70EP-T1_GE3DKR
Base Product Number: SQJB70
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Singapore
Automotive N-Channel Dual 100 V MOSFET Transistor
278-SQJB70EP-T1_GE3
Automotive N-Channel Dual 100 V MOSFET Transistor 278-SQJB70EP-T1_GE3
Automotive AEC-Q101 Dual N-Channel 100 V MOSFET Product overview: SQJB70EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, Dual, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, Dual, 100 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJB70EP-T1_GE3 can be used for catalog matching and distributor lookup.

Automotive AEC-Q101 Dual N-Channel 100 V MOSFET Product overview: SQJB70EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, Dual, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, Dual, 100 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJB70EP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Dual N-Ch, 100V, Powerpak So; Transistor Polarity Vishay - 28AC3078 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 100V, Powerpak So; Transistor Polarity Vishay
28AC3078
Mosfet, Dual N-Ch, 100V, Powerpak So; Transistor Polarity Vishay 28AC3078
MOSFET, DUAL N-CH, 100V, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; PowerRoHS Compliant: Yes

MOSFET, DUAL N-CH, 100V, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; PowerRoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET Dual N-Ch 100V AEC-Q101 Qualified

MOSFET Dual N-Ch 100V AEC-Q101 Qualified

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJB70EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJB70EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJB70EP-T1_GE3
MOSFET 2N-CH 100V 11.3A PPAK SO8

MOSFET 2N-CH 100V 11.3A PPAK SO8

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQJB70EP-T1_GE3TR-ND SQJB70EP-T1_GE3 1324670-SQJB70EP-T1_GE3 278-SQJB70EP-T1_GE3 28AC3078 SQJB70EP-T1_GE3 SQJB70EP-T1_GE3
Product Name FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays Automotive N-Channel Dual 100 V MOSFET Transistor Mosfet, Dual N-Ch, 100V, Powerpak So; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SO-8; PowerPAK® SO-8 Dual SO-8; PowerPAK® SO-8 Dual SO-8; SOT3; PowerPAK® SO-8 Dual TO-3 Automotive
Transistor Grade / Operating Range Automotive
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
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