Mosfet Array 2 N-Channel (Dual) 100V 11A (Tc) 27W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 11A (Tc) 27W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 11A (Tc) 27W Surface Mount PowerPAK® SO-8 Dual
Win Source Part Number: 1278521-SQJB68EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 27W
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJB68EP-T1_GE3CT,SQ
Base Product Number: SQJB68
Trans MOSFET N-CH 100V 11A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R Product overview: SQJB68EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJB68EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET 100V Vds 20V Vgs PowerPAK SO-8L
MOSFET, AEC-Q101, DUAL N-CH, 100V, 11A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0765ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; RoHS Compliant: Yes
MOSFET 2N-CH 100V 11A PPAK SO8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQJB68EP-T1_GE3CT-ND | 1278521-SQJB68EP-T1_GE3 | 278-SQJB68EP-T1_GE3 | SQJB68EP-T1_GE3 | 81AC2816 | SQJB68EP-T1_GE3 |
| Product Name | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Automotive 100V 11A MOSFET Transistor | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 100V, 11A; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SO-8; PowerPAK® SO-8 Dual | SO-8; SOT3 | Tape and Reel | TO-3 | Automotive | |
| Transistor Grade / Operating Range | Automotive | |||||
| Polarity | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts |
