Power Field-Effect Transistor, 30A I(D), 60V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJB60EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 60V, 0.012ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 60V, 0.012ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJB60EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET 2 N-CH 60V POWERPAK SO8
Win Source Part Number: 1278518-SQJB60EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 48W
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJB60EP-T1_GE3CT,SQ
Base Product Number: SQJB60
Mosfet Array 2 N-Channel (Dual) 60V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 60V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 60V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
MOSFET 2N-CH 60V 30A PPAK SO8
MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.01ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJB60EP-T1_GE3 | SQJB60EP-T1_GE3 | 1278518-SQJB60EP-T1_GE3 | SQJB60EP-T1_GE3DKR-ND | SQJB60EP-T1_GE3 | SQJB60EP-T1_GE3 | 99Y9674 |
| Product Name | N-Channel 30A 60V 0.012ohm MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, Powerpakso; Transistor Polarity Vishay |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | ||||||
| IDSS | 30000 milliamps | 30000 milliamps |
