Win Source Part Number: 1278530-SQJB40EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 34W
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJB40EP-T1_GE3TR,SQ
Base Product Number: SQJB40
Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO Product overview: SQJB40EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 40V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 40V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJB40EP-T1_GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 40V 30A (Tc) 34W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 30A (Tc) 34W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 30A (Tc) 34W Surface Mount PowerPAK® SO-8 Dual
MOSFET 2 N-CH 40V POWERPAK SO8
MOSFET, N-CH, 40V, 30A, 175DEG C, 34W ROHS COMPLIANT: YES
MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified
MOSFET 2N-CH 40V 30A PPAK SO8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1278530-SQJB40EP-T1_GE3 | 278-SQJB40EP-T1_GE3 | SQJB40EP-T1_GE3TR-ND | SQJB40EP-T1_GE3 | 75AH9213 | SQJB40EP-T1_GE3 | SQJB40EP-T1_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Automotive 40V 30A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Mosfet, N-Ch, 40V, 30A, 175Deg C, 34W Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 Dual | SO-8; PowerPAK® SO-8 Dual | TO-3 | Automotive | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 34000 milliwatts |
