Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJA96EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 19.4A, 80V, 0.0215ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 19.4A, 80V, 0.0215ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA96EP-T1_GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1324703-SQJA96EP-T1_
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 48W (Tc)
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Fake Threat In the Open Market: 75
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SQJA96EP-T1_GE3CT,SQ
Base Product Number: SQJA96
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 80V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 80V 30A PPAK SO-8
MOSFET, AEC-Q101, N-CH, 80V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0179ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET 80V Vds 30A Id AEC-Q101 Qualified
MOSFET N-CH 80V 30A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQJA96EP-T1_GE3 | 1324703-SQJA96EP-T1_GE3 | SQJA96EP-T1_GE3TR-ND | SQJA96EP-T1_GE3 | 10AC9132 | SQJA96EP-T1_GE3 | SQJA96EP-T1_GE3 |
| Product Name | N-Channel 19.4A 80V 0.0215ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 80V, Powerpak So; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 48000 milliwatts | 48000 milliwatts | |||||
| Package Type | SO-8; SOT3; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | ||
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
