The 1277845-SQJA92EP-T1_GE3 is an automotive N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 80 V and a continuous drain current rating of 57 A at a case temperature of 25 ¬8C. The on-state resistance (R_DS(on)) is specified at 9.5 mOc when the gate-source voltage (V_GS) is 10 V and the drain current is 10 A. This device is AEC-Q101 qualified, ensuring its reliability in automotive environments. The MOSFET operates within a temperature range of -55 ¬8C to 175 ¬8C and has a maximum power dissipation of 68 W at 25 ¬8C. It also exhibits a low gate charge of 45 nC at 10 V, which contributes to efficient switching performance. The package type is PowerPAK SO-8L, suitable for surface mount applications. This product is ideal for engineers looking for a robust and efficient MOSFET for automotive or high-temperature applications.
Win Source Part Number: 1277845-SQJA92EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJA92EP-T1_GE3DKR,S
Base Product Number: SQJA92
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 80V 57A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 57A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 57A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 80V 57A PPAK SO-8 Product overview: SQJA92EP-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA92EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET N-Channel 80V PowerPAK SO-8L
MOSFET N-CH 80V 57A PPAK SO-8
MOSFET, AEC-Q101, N-CH, 80V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277845-SQJA92EP-T1_GE3 | SQJA92EP-T1_GE3CT-ND | 278-SQJA92EP-T1_GE3 | SQJA92EP-T1_GE3 | SQJA92EP-T1_GE3 | 10AC9130 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 80V 57A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 80V, Powerpak So; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | Tape & Reel (TR) | SO-8; PowerPAKR SO-8 | TO-3 | |
| Transistor Grade / Operating Range | Automotive | |||||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0360 kS |
