Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJA82EP-T1_GE3

Description
MOSFET N-CH 80V 60A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 80V 60A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQJA82EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJA82EP-T1_GE3
Single FETs, MOSFETs SQJA82EP-T1_GE3
MOSFET N-CH 80V 60A PPAK SO-8

MOSFET N-CH 80V 60A PPAK SO-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277842-SQJA82EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277842-SQJA82EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277842-SQJA82EP-T1_GE3
Win Source Part Number: 1277842-SQJA82EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQJA82EP-T1_GE3DKR,S QJA82EP-T1_GE3CT,SQJ A82EP-T1_GE3TR Base Product Number: SQJA82 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277842-SQJA82EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJA82EP-T1_GE3DKR,SQJA82EP-T1_GE3CT,SQJA82EP-T1_GE3TR
Base Product Number: SQJA82
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SQJA82EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA82EP-T1_GE3TR-ND
Single FETs, MOSFETs SQJA82EP-T1_GE3TR-ND
N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA82EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA82EP-T1_GE3DKR-ND
Single FETs, MOSFETs SQJA82EP-T1_GE3DKR-ND
N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA82EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA82EP-T1_GE3CT-ND
Single FETs, MOSFETs SQJA82EP-T1_GE3CT-ND
N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
N-Channel 60A 80V 0.0082ohm MOSFET Transistor
278-SQJA82EP-T1_GE3
N-Channel 60A 80V 0.0082ohm MOSFET Transistor 278-SQJA82EP-T1_GE3
Power Field-Effect Transistor, 60A I(D), 80V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJA82EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60A, 80V, 0.0082ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60A, 80V, 0.0082ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA82EP-T1_GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 60A I(D), 80V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJA82EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60A, 80V, 0.0082ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60A, 80V, 0.0082ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA82EP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Channel 80V PowerPAK SO-8L

MOSFET N-Channel 80V PowerPAK SO-8L

Buy Now Datasheet
Mosfet, N-Ch, 80V, 60A, 175Deg C, 68W Rohs Compliant Vishay - 75AH9212 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 80V, 60A, 175Deg C, 68W Rohs Compliant Vishay
75AH9212
Mosfet, N-Ch, 80V, 60A, 175Deg C, 68W Rohs Compliant Vishay 75AH9212
MOSFET, N-CH, 80V, 60A, 175DEG C, 68W ROHS COMPLIANT: YES

MOSFET, N-CH, 80V, 60A, 175DEG C, 68W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJA82EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJA82EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJA82EP-T1_GE3
MOSFET N-CH 80V 60A PPAK SO-8

MOSFET N-CH 80V 60A PPAK SO-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQJA82EP-T1_GE3 1277842-SQJA82EP-T1_GE3 SQJA82EP-T1_GE3TR-ND 278-SQJA82EP-T1_GE3 SQJA82EP-T1_GE3 75AH9212 SQJA82EP-T1_GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs N-Channel 60A 80V 0.0082ohm MOSFET Transistor MOSFET Mosfet, N-Ch, 80V, 60A, 175Deg C, 68W Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 80 volts
IDSS 60000 milliamps
PD 68000 milliwatts
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