MOSFET N-CH 60V 60A PPAK SO-8
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1277837-SQJA62EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJA62EP-T1_GE3CT,SQ
Base Product Number: SQJA62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-Channel 60V PowerPAK SO-8L
MOSFET N-CH 60V 60A PPAK SO-8
MOSFET, N-CH, 60V, 60A, 175DEG C, 68W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:68W; No. of Pins:8Pins RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJA62EP-T1_GE3 | SQJA62EP-T1_GE3CT-ND | 1277837-SQJA62EP-T1_GE3 | SQJA62EP-T1_GE3 | SQJA62EP-T1_GE3 | 10AC9126 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | |||||
| IDSS | 60000 milliamps | 60000 milliamps | ||||
| PD | 68000 milliwatts | 68000 milliwatts |
