Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQJA62EP-T1_GE3

Description
Win Source Part Number: 1277837-SQJA62EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQJA62EP-T1_GE3CT,SQ JA62EP-T1_GE3TR,SQJA 62EP-T1_GE3DKR Base Product Number: SQJA62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote Datasheet
Description
Win Source Part Number: 1277837-SQJA62EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQJA62EP-T1_GE3CT,SQ JA62EP-T1_GE3TR,SQJA 62EP-T1_GE3DKR Base Product Number: SQJA62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277837-SQJA62EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277837-SQJA62EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277837-SQJA62EP-T1_GE3
Win Source Part Number: 1277837-SQJA62EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQJA62EP-T1_GE3CT,SQ JA62EP-T1_GE3TR,SQJA 62EP-T1_GE3DKR Base Product Number: SQJA62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277837-SQJA62EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJA62EP-T1_GE3CT,SQJA62EP-T1_GE3TR,SQJA62EP-T1_GE3DKR
Base Product Number: SQJA62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SQJA62EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA62EP-T1_GE3CT-ND
Single FETs, MOSFETs SQJA62EP-T1_GE3CT-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA62EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA62EP-T1_GE3TR-ND
Single FETs, MOSFETs SQJA62EP-T1_GE3TR-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA62EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA62EP-T1_GE3DKR-ND
Single FETs, MOSFETs SQJA62EP-T1_GE3DKR-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA62EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJA62EP-T1_GE3
Single FETs, MOSFETs SQJA62EP-T1_GE3
MOSFET N-CH 60V 60A PPAK SO-8

MOSFET N-CH 60V 60A PPAK SO-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJA62EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJA62EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJA62EP-T1_GE3
MOSFET N-CH 60V 60A PPAK SO-8

MOSFET N-CH 60V 60A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Channel 60V PowerPAK SO-8L

MOSFET N-Channel 60V PowerPAK SO-8L

Buy Now Datasheet
Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay - 10AC9126 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay
10AC9126
Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay 10AC9126
MOSFET, N-CH, 60V, 60A, 175DEG C, 68W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:68W; No. of Pins:8Pins RoHS Compliant: Yes

MOSFET, N-CH, 60V, 60A, 175DEG C, 68W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:68W; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277837-SQJA62EP-T1_GE3 SQJA62EP-T1_GE3CT-ND SQJA62EP-T1_GE3 SQJA62EP-T1_GE3 SQJA62EP-T1_GE3 10AC9126
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 SO-8; PowerPAKR SO-8 TO-3
Transistor Grade / Operating Range Automotive
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - IRAUIRFS8409-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
View Details
5 suppliers
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor - QPD1025 - Qorvo
Specs
Transistor Technology / Material 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type NI-1230 (Earless)
View Details
2 suppliers