Trans MOSFET N-CH 60V 75A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO Product overview: SQJA62EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA62EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 60A PPAK SO-8
Win Source Part Number: 1277837-SQJA62EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJA62EP-T1_GE3CT,SQ
Base Product Number: SQJA62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-Channel 60V PowerPAK SO-8L
MOSFET, N-CH, 60V, 60A, 175DEG C, 68W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:68W; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET N-CH 60V 60A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQJA62EP-T1_GE3 | SQJA62EP-T1_GE3 | 1277837-SQJA62EP-T1_GE3 | SQJA62EP-T1_GE3CT-ND | SQJA62EP-T1_GE3 | 10AC9126 | SQJA62EP-T1_GE3 |
| Product Name | Automotive 60V 75A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| Transconductance | 0.0700 kS | ||||||
| PD | 68 milliwatts | 68000 milliwatts | 68000 milliwatts |
