Vishay Precision Group Single FETs, MOSFETs SQJA62EP-T1_GE3

Description
MOSFET N-CH 60V 60A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 60V 60A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQJA62EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJA62EP-T1_GE3
Single FETs, MOSFETs SQJA62EP-T1_GE3
MOSFET N-CH 60V 60A PPAK SO-8

MOSFET N-CH 60V 60A PPAK SO-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SQJA62EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA62EP-T1_GE3CT-ND
Single FETs, MOSFETs SQJA62EP-T1_GE3CT-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA62EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA62EP-T1_GE3TR-ND
Single FETs, MOSFETs SQJA62EP-T1_GE3TR-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA62EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA62EP-T1_GE3DKR-ND
Single FETs, MOSFETs SQJA62EP-T1_GE3DKR-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277837-SQJA62EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277837-SQJA62EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277837-SQJA62EP-T1_GE3
Win Source Part Number: 1277837-SQJA62EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQJA62EP-T1_GE3CT,SQ JA62EP-T1_GE3TR,SQJA 62EP-T1_GE3DKR Base Product Number: SQJA62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277837-SQJA62EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJA62EP-T1_GE3CT,SQJA62EP-T1_GE3TR,SQJA62EP-T1_GE3DKR
Base Product Number: SQJA62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Channel 60V PowerPAK SO-8L

MOSFET N-Channel 60V PowerPAK SO-8L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJA62EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJA62EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJA62EP-T1_GE3
MOSFET N-CH 60V 60A PPAK SO-8

MOSFET N-CH 60V 60A PPAK SO-8

Supplier's Site
Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay - 10AC9126 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay
10AC9126
Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay 10AC9126
MOSFET, N-CH, 60V, 60A, 175DEG C, 68W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:68W; No. of Pins:8Pins RoHS Compliant: Yes

MOSFET, N-CH, 60V, 60A, 175DEG C, 68W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:68W; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQJA62EP-T1_GE3 SQJA62EP-T1_GE3CT-ND 1277837-SQJA62EP-T1_GE3 SQJA62EP-T1_GE3 SQJA62EP-T1_GE3 10AC9126
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 60A, 175Deg C, 68W; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
IDSS 60000 milliamps 60000 milliamps
PD 68000 milliwatts 68000 milliwatts
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