Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs SQJA60EP-T1_GE3

Description
Win Source Part Number: 1339370-SQJA60EP-T1_ GE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 45W (Tc) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SQJA60 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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Description
Win Source Part Number: 1339370-SQJA60EP-T1_ GE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 45W (Tc) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SQJA60 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1339370-SQJA60EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1339370-SQJA60EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1339370-SQJA60EP-T1_GE3
Win Source Part Number: 1339370-SQJA60EP-T1_ GE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 45W (Tc) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SQJA60 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V

Win Source Part Number: 1339370-SQJA60EP-T1_GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 45W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SQJA60
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - SQJA60EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJA60EP-T1_GE3
Single FETs, MOSFETs SQJA60EP-T1_GE3
MOSFET N-CH 60V 30A PPAK SO-8

MOSFET N-CH 60V 30A PPAK SO-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SQJA60EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA60EP-T1_GE3DKR-ND
Single FETs, MOSFETs SQJA60EP-T1_GE3DKR-ND
N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA60EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA60EP-T1_GE3TR-ND
Single FETs, MOSFETs SQJA60EP-T1_GE3TR-ND
N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA60EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA60EP-T1_GE3CT-ND
Single FETs, MOSFETs SQJA60EP-T1_GE3CT-ND
N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 60V Vds PowerPAK AEC-Q101 Qualified

MOSFET 60V Vds PowerPAK AEC-Q101 Qualified

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJA60EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJA60EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJA60EP-T1_GE3
MOSFET N-CH 60V 30A PPAK SO-8

MOSFET N-CH 60V 30A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1339370-SQJA60EP-T1_GE3 SQJA60EP-T1_GE3 SQJA60EP-T1_GE3DKR-ND SQJA60EP-T1_GE3 SQJA60EP-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 45000 milliwatts 45000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 SO-8; PowerPAKR SO-8
Transistor Technology / Material MOSFET (Metal Oxide)
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