N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Power Field-Effect Transistor, 24.6A I(D), 60V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJA60EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 24.6A, 60V, 0.0125ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24.6A, 60V, 0.0125ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA60EP-T1_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1339370-SQJA60EP-T1_
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 45W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SQJA60
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
MOSFET N-CH 60V 30A PPAK SO-8
MOSFET N-CH 60V 30A PPAK SO-8
MOSFET 60V Vds PowerPAK AEC-Q101 Qualified
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJA60EP-T1_GE3DKR-ND | 278-SQJA60EP-T1_GE3 | 1339370-SQJA60EP-T1_GE3 | SQJA60EP-T1_GE3 | SQJA60EP-T1_GE3 | SQJA60EP-T1_GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 24.6A 60V 0.0125ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 | ||
| Transistor Grade / Operating Range | Automotive | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| PD | 45000 milliwatts | 45000 milliwatts |
