Win Source Part Number: 1277801-SQJA36EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6636 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQJA36EP-T1_GE3D
Base Product Number: SQJA36
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFETs 40-V(D-S)175C MOSFET N-CHANNEL PowerPAK Product overview: SQJA36EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQJA36EP-T1_GE3
MOSFET N-CH 40V 350A PPAK SO-8
N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8
MOSFET, AEC-Q101, N-CH, 40V, 350A, 500W ROHS COMPLIANT: YES
MOSFET N-CH 40V 350A PPAK SO-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277801-SQJA36EP-T1_GE3 | 2088-SQJA36EP-T1_GE3 | SQJA36EP-T1_GE3 | 742-SQJA36EP-T1_GE3CT-ND | 77AH0235 | SQJA36EP-T1_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 40V, 350A, 500W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | SO-8; SOT3 | Reel | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 |
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0950 kS | |||||
| PD | 500 milliwatts | 500000 milliwatts |
