Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJA36EP-T1_GE3

Description
MOSFET N-CH 40V 350A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 40V 350A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQJA36EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJA36EP-T1_GE3
Single FETs, MOSFETs SQJA36EP-T1_GE3
MOSFET N-CH 40V 350A PPAK SO-8

MOSFET N-CH 40V 350A PPAK SO-8

Supplier's Site Datasheet
Singapore
N-Channel MOSFET Transistor
2088-SQJA36EP-T1_GE3
N-Channel MOSFET Transistor 2088-SQJA36EP-T1_GE3
MOSFETs 40-V(D-S)175C MOSFET N-CHANNEL PowerPAK Product overview: SQJA36EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQJA36EP-T1_GE3 can be used for catalog matching and distributor lookup.

MOSFETs 40-V(D-S)175C MOSFET N-CHANNEL PowerPAK Product overview: SQJA36EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQJA36EP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277801-SQJA36EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277801-SQJA36EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277801-SQJA36EP-T1_GE3
Win Source Part Number: 1277801-SQJA36EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 350A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 500W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6636 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SQJA36EP-T1_GE3D KR,742-SQJA36EP-T1_G E3TR,742-SQJA36EP-T1 _GE3CT Base Product Number: SQJA36 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277801-SQJA36EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6636 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQJA36EP-T1_GE3DKR,742-SQJA36EP-T1_GE3TR,742-SQJA36EP-T1_GE3CT
Base Product Number: SQJA36
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQJA36EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQJA36EP-T1_GE3CT-ND
Single FETs, MOSFETs 742-SQJA36EP-T1_GE3CT-ND
N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQJA36EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQJA36EP-T1_GE3TR-ND
Single FETs, MOSFETs 742-SQJA36EP-T1_GE3TR-ND
N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQJA36EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQJA36EP-T1_GE3DKR-ND
Single FETs, MOSFETs 742-SQJA36EP-T1_GE3DKR-ND
N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJA36EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJA36EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJA36EP-T1_GE3
MOSFET N-CH 40V 350A PPAK SO-8

MOSFET N-CH 40V 350A PPAK SO-8

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 40V, 350A, 500W Rohs Compliant Vishay - 77AH0235 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 40V, 350A, 500W Rohs Compliant Vishay
77AH0235
Mosfet, Aec-Q101, N-Ch, 40V, 350A, 500W Rohs Compliant Vishay 77AH0235
MOSFET, AEC-Q101, N-CH, 40V, 350A, 500W ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 40V, 350A, 500W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQJA36EP-T1_GE3 2088-SQJA36EP-T1_GE3 1277801-SQJA36EP-T1_GE3 742-SQJA36EP-T1_GE3CT-ND SQJA36EP-T1_GE3 77AH0235
Product Name Single FETs, MOSFETs N-Channel MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 40V, 350A, 500W Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts
IDSS 350000 milliamps
PD 500000 milliwatts 500 milliwatts
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