Trans MOSFET N-CH 200V 22.5A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R Product overview: SQJA20EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 200V, 22.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 200V, 22.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA20EP-T1_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277793-SQJA20EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJA20EP-T1_GE3DKR,S
Base Product Number: SQJA20
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 200V 22.5A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 200V 22.5A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 200V 22.5A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
MOSFET, N-CH, AEC-Q101, 200V, 22.5A; Transistor Polarity:N Channel; Continuous Drain Current Id:22.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 200V 22.5A PPAK SO-8
MOSFET N-CH 200V 22.5A PPAK SO-8
MOSFET 200V Vds -/+20V Vgs AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJA20EP-T1_GE3 | 1277793-SQJA20EP-T1_GE3 | SQJA20EP-T1_GE3DKR-ND | 47AC9704 | SQJA20EP-T1_GE3 | SQJA20EP-T1_GE3 | SQJA20EP-T1_GE3 |
| Product Name | Automotive 200V 22.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, Aec-Q101, 200V, 22.5A; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 200 volts | 200 volts | |||||
| PD | 68000 milliwatts | 68000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | Tape and Reel | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 |
