Trans MOSFET N-CH 60V 57A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R Product overview: SQJA06EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA06EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 57A PPAK SO-8
N-Channel 60V 57A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 57A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 57A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1277834-SQJA06EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJA06EP-T1_GE3DKR,S
Base Product Number: SQJA06
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, AEC-Q101, N-CH, 60V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 57A PPAK SO-8
MOSFET 60V Vds PowerPAK AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJA06EP-T1_GE3 | SQJA06EP-T1_GE3 | SQJA06EP-T1_GE3DKR-ND | 1277834-SQJA06EP-T1_GE3 | 15AC8692 | SQJA06EP-T1_GE3 | SQJA06EP-T1_GE3 |
| Product Name | Automotive 60V 57A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, Aec-Q101, N-Ch, 60V, Powerpak So; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 55000 milliwatts | 55000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | Tape and Reel | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | TO-3 | SO-8; PowerPAKR SO-8 |
