Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQJA02EP-T1_GE3

Description
Win Source Part Number: 1277800-SQJA02EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 68W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJA02EP-T1_GE3DKR,S QJA02EP-T1_GE3CT,SQJ A02EP-T1_GE3TR Base Product Number: SQJA02 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277800-SQJA02EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 68W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJA02EP-T1_GE3DKR,S QJA02EP-T1_GE3CT,SQJ A02EP-T1_GE3TR Base Product Number: SQJA02 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277800-SQJA02EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277800-SQJA02EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277800-SQJA02EP-T1_GE3
Win Source Part Number: 1277800-SQJA02EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 68W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJA02EP-T1_GE3DKR,S QJA02EP-T1_GE3CT,SQJ A02EP-T1_GE3TR Base Product Number: SQJA02 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277800-SQJA02EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJA02EP-T1_GE3DKR,SQJA02EP-T1_GE3CT,SQJA02EP-T1_GE3TR
Base Product Number: SQJA02
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SQJA02EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA02EP-T1_GE3TR-ND
Single FETs, MOSFETs SQJA02EP-T1_GE3TR-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SQJA02EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA02EP-T1_GE3CT-ND
Single FETs, MOSFETs SQJA02EP-T1_GE3CT-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJA02EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJA02EP-T1_GE3DKR-ND
Single FETs, MOSFETs SQJA02EP-T1_GE3DKR-ND
N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
Automotive 60V 75A MOSFET Transistor
278-SQJA02EP-T1_GE3
Automotive 60V 75A MOSFET Transistor 278-SQJA02EP-T1_GE3
Trans MOSFET N-CH 60V 75A 5-Pin(4+Tab) PowerPAK SO Automotive AEC-Q101 Product overview: SQJA02EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA02EP-T1_GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 60V 75A 5-Pin(4+Tab) PowerPAK SO Automotive AEC-Q101 Product overview: SQJA02EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA02EP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Aec-Q101, N-Ch, 60V, Powerpak So; Transistor Polarity Vishay - 10AC9125 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 60V, Powerpak So; Transistor Polarity Vishay
10AC9125
Mosfet, Aec-Q101, N-Ch, 60V, Powerpak So; Transistor Polarity Vishay 10AC9125
MOSFET, AEC-Q101, N-CH, 60V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 60V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJA02EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJA02EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJA02EP-T1_GE3
MOSFET N-CH 60V 60A PPAK SO-8

MOSFET N-CH 60V 60A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V Vds 60A Id AEC-Q101 Qualified

MOSFET 60V Vds 60A Id AEC-Q101 Qualified

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277800-SQJA02EP-T1_GE3 SQJA02EP-T1_GE3TR-ND 278-SQJA02EP-T1_GE3 10AC9125 SQJA02EP-T1_GE3 SQJA02EP-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Automotive 60V 75A MOSFET Transistor Mosfet, Aec-Q101, N-Ch, 60V, Powerpak So; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 TO-3 SO-8; PowerPAKR SO-8
Transistor Grade / Operating Range Automotive
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
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