The 1324690-SQJA00EP-T1_GE3 is an N-Channel MOSFET designed for automotive applications, featuring a maximum drain-source voltage of 60 V and a continuous drain current rating of 30 A at a case temperature of 25 ¬8C. It has a low on-state resistance of 13 mOc at a gate-source voltage of 10 V and a drain current of 10 A. The device is housed in a PowerPAK SO-8L package, suitable for surface mounting. This MOSFET operates within a temperature range of -55 ¬8C to +175 ¬8C and is AEC-Q101 qualified, ensuring reliability in automotive environments. The maximum power dissipation is rated at 48 W at 25 ¬8C, decreasing to 16 W at 125 ¬8C. The gate charge is specified at a maximum of 35 nC at 10 V, which contributes to efficient switching performance. The part also features a maximum gate-source voltage of ¬±20 V and is compliant with RoHS standards. Engineers considering this component should evaluate its specifications against their project requirements, particularly in terms of voltage, current handling, and thermal performance.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1324690-SQJA00EP-T1_
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 48W (Tc)
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SQJA00EP-T1_GE3TR,SQ
Base Product Number: SQJA00
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
Power Field-Effect Transistor, 25.6A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIIN Product overview: SQJA00EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25.6A, 60V, 0.013ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25.6A, 60V, 0.013ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA00EP-T1_GE3 can be used for catalog matching and distributor lookup.
N-Channel 60V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
MOSFET, AEC-Q101, N-CH, 60V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0105ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 30A PPAK SO-8
MOSFET N-CH 60V 30A PPAK SO-8
MOSFET 60V Vds 30A Id AEC-Q101 Qualified
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1324690-SQJA00EP-T1_GE3 | 278-SQJA00EP-T1_GE3 | SQJA00EP-T1_GE3CT-ND | 10AC9124 | SQJA00EP-T1_GE3 | SQJA00EP-T1_GE3 | SQJA00EP-T1_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 25.6A 60V 0.013ohm MOSFET Transistor | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 60V, Powerpak So; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 48000 milliwatts | 48000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SO-8; SOT3; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 | ||
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
