Vishay Intertechnology, Inc. FET, MOSFET Arrays SQJ912AEP-T2_GE3

Description
DUAL N-CHANNEL 40-V (D-S) 175C M
Datasheet
Description
DUAL N-CHANNEL 40-V (D-S) 175C M
Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SQJ912AEP-T2_GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SQJ912AEP-T2_GE3
FET, MOSFET Arrays SQJ912AEP-T2_GE3
DUAL N-CHANNEL 40-V (D-S) 175C M

DUAL N-CHANNEL 40-V (D-S) 175C M

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJ912AEP-T2_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJ912AEP-T2_GE3
MOSFET 2N-CH 40V 30A PPAK SO8

MOSFET 2N-CH 40V 30A PPAK SO8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQJ912AEP-T2_GE3 SQJ912AEP-T2_GE3
Product Name FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual)
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts
IDSS 30000 milliamps
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