N-Channel 40V 60A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 60A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 60A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
40V 60A N-Channel MOSFET, 3.6mR Rds(on), PowerPAK SO-8L Product overview: SQJ886EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ886EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 934919-SQJ886EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 40 V 60A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8 Dual
Package: PowerPAK® SO-8 Dual
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ886
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ886EP-T1_GE3-ND, SQJ886EP-T1-GE3, SQJ886EP-T1-GE3-ND, SQJ886EP-T1_GE3CT, SQJ886EP-T1_GE3DKR, SQJ886EP-T1_GE3TR
MOSFET N-CH 40V 60A PPAK SO-8
MOSFET 40V 60A 55W AEC-Q101 Qualified
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJ886EP-T1_GE3DKR-ND | 278-SQJ886EP-T1_GE3 | SQJ886EP-T1_GE3 | 934919-SQJ886EP-T1_GE3 | SQJ886EP-T1_GE3 | SQJ886EP-T1_GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 40V 60A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ886EP-T1_GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK® SO-8 Dual | Surface Mount | ||
| Transistor Grade / Operating Range | Automotive | |||||
| PD | 55000 milliwatts | 55000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
