MOSFET N-CH 40V 60A PPAK SO-8
Power Field-Effect Transistor, 36A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJ860EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 36A, 40V, 0.006ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 36A, 40V, 0.006ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ860EP-T1_GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 934918-SQJ860EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 40 V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ860
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ860EP-T1_GE3CT, SQJ860EP-T1_GE3DKR, SQJ860EP-T1_GE3TR
N-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 40V 60A PPAK SO-8
MOSFET 40V Vds 60A Id AEC-Q101 Qualified
MOSFET, AEC-Q101, N-CH, 40V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJ860EP-T1_GE3 | 278-SQJ860EP-T1_GE3 | 934918-SQJ860EP-T1_GE3 | 742-SQJ860EP-T1_GE3CT-ND | SQJ860EP-T1_GE3 | SQJ860EP-T1_GE3 | 10AC9139 |
| Product Name | Single FETs, MOSFETs | N-Channel 36A 40V 0.006ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ860EP-T1_GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 40V, Powerpak So; Transistor Polarity Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | ||||||
| IDSS | 60000 milliamps | 60000 milliamps | |||||
| PD | 48000 milliwatts |
