Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ858AEP-T1_GE3

Description
MOSFET N-CH 40V 58A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 40V 58A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQJ858AEP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJ858AEP-T1_GE3
Single FETs, MOSFETs SQJ858AEP-T1_GE3
MOSFET N-CH 40V 58A PPAK SO-8

MOSFET N-CH 40V 58A PPAK SO-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ858AEP-T1_GE3 - 792807-SQJ858AEP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ858AEP-T1_GE3
792807-SQJ858AEP-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ858AEP-T1_GE3 792807-SQJ858AEP-T1_GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 792807-SQJ858AEP-T1_ GE3 Series: Automotive, AEC-Q101, TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Family Name: SQJ858AEP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PowerPAK SO-8 Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2450pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 48W (Tc) Rds On (Maximum) @ Id, Vgs: 6.3 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): STS15N4LLF5; BSC059N04LSGXT; TPCA8085; TPCA8085,L1Q(O; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 792807-SQJ858AEP-T1_GE3
Series: Automotive, AEC-Q101, TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Family Name: SQJ858AEP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PowerPAK SO-8
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2450pF @ 20V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 48W (Tc)
Rds On (Maximum) @ Id, Vgs: 6.3 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): STS15N4LLF5; BSC059N04LSGXT; TPCA8085; TPCA8085,L1Q(O;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SQJ858AEP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ858AEP-T1_GE3CT-ND
Single FETs, MOSFETs SQJ858AEP-T1_GE3CT-ND
N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJ858AEP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ858AEP-T1_GE3DKR-ND
Single FETs, MOSFETs SQJ858AEP-T1_GE3DKR-ND
N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJ858AEP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ858AEP-T1_GE3TR-ND
Single FETs, MOSFETs SQJ858AEP-T1_GE3TR-ND
N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
N-Channel 40V 58A MOSFET Transistor
278-SQJ858AEP-T1_GE3
N-Channel 40V 58A MOSFET Transistor 278-SQJ858AEP-T1_GE3
N-Channel MOSFET, 40V, 58A, 6.3mR, PowerPAK SO-8L Product overview: SQJ858AEP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ858AEP-T1_GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 40V, 58A, 6.3mR, PowerPAK SO-8L Product overview: SQJ858AEP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ858AEP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 40V 58A 48W AEC-Q101 Qualified

MOSFET 40V 58A 48W AEC-Q101 Qualified

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJ858AEP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJ858AEP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJ858AEP-T1_GE3
MOSFET N-CH 40V 58A PPAK SO-8

MOSFET N-CH 40V 58A PPAK SO-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQJ858AEP-T1_GE3 792807-SQJ858AEP-T1_GE3 SQJ858AEP-T1_GE3CT-ND 278-SQJ858AEP-T1_GE3 SQJ858AEP-T1_GE3 SQJ858AEP-T1_GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ858AEP-T1_GE3 Single FETs, MOSFETs N-Channel 40V 58A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts
IDSS 58000 milliamps
PD 48000 milliwatts 48000 milliwatts 48000 milliwatts
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