N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel MOSFET, 40V, 58A, 6.3mR, PowerPAK SO-8L Product overview: SQJ858AEP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ858AEP-T1_GE3
MOSFET N-CH 40V 58A PPAK SO-8
Manufacturer: Vishay Siliconix
Win Source Part Number: 792807-SQJ858AEP-T1_
Series: Automotive, AEC-Q101, TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Family Name: SQJ858AEP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PowerPAK SO-8
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2450pF @ 20V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 48W (Tc)
Rds On (Maximum) @ Id, Vgs: 6.3 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): STS15N4LLF5; BSC059N04LSGXT; TPCA8085; TPCA8085,L1Q(O;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
MOSFET N-CH 40V 58A PPAK SO-8
MOSFET 40V 58A 48W AEC-Q101 Qualified
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJ858AEP-T1_GE3CT-ND | 278-SQJ858AEP-T1_GE3 | SQJ858AEP-T1_GE3 | 792807-SQJ858AEP-T1_GE3 | SQJ858AEP-T1_GE3 | SQJ858AEP-T1_GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 40V 58A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ858AEP-T1_GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAKR SO-8 | ||
| Transistor Grade / Operating Range | Automotive | |||||
| PD | 48000 milliwatts | 48000 milliwatts | 48000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
