Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ840EP-T1_GE3

Description
N-Channel 30V 30A (Tc) 46W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 30V 30A (Tc) 46W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQJ840EP-T1_GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ840EP-T1_GE3-ND
Single FETs, MOSFETs SQJ840EP-T1_GE3-ND
N-Channel 30V 30A (Tc) 46W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 30A (Tc) 46W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ840EP-T1_GE3 - 1101739-SQJ840EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ840EP-T1_GE3
1101739-SQJ840EP-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ840EP-T1_GE3 1101739-SQJ840EP-T1_GE3
Manufacturer: Vishay Win Source Part Number: 1101739-SQJ840EP-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1900pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.3 mOhm @ 10.3A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101739-SQJ840EP-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1900pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.3 mOhm @ 10.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 30A 30V 0.0093ohm MOSFET Transistor
2088-SQJ840EP-T1_GE3
N-Channel 30A 30V 0.0093ohm MOSFET Transistor 2088-SQJ840EP-T1_GE3
Power Field-Effect Transistor, 30A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ840EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 30V, 0.0093ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 30V, 0.0093ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQJ840EP-T1_GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 30A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ840EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 30V, 0.0093ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 30V, 0.0093ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQJ840EP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJ840EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJ840EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJ840EP-T1_GE3
MOSFET N-CH 30V 30A PPAK SO-8

MOSFET N-CH 30V 30A PPAK SO-8

Supplier's Site
Mosfet, N-Ch, 30V, 30A, Powerpak So Rohs Compliant Vishay - 26AK5827 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 30A, Powerpak So Rohs Compliant Vishay
26AK5827
Mosfet, N-Ch, 30V, 30A, Powerpak So Rohs Compliant Vishay 26AK5827
MOSFET, N-CH, 30V, 30A, POWERPAK SO ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 30A, POWERPAK SO ROHS COMPLIANT: YES

Supplier's Site
MOSFET N-CH 30V 30A PPAK SO-8 - 880-SQJ840EP-T1_GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 30A PPAK SO-8
880-SQJ840EP-T1_GE3
MOSFET N-CH 30V 30A PPAK SO-8 880-SQJ840EP-T1_GE3
MOSFET N-CH 30V 30A PPAK SO-8

MOSFET N-CH 30V 30A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 30A 46W AEC-Q101 Qualified

MOSFET 30V 30A 46W AEC-Q101 Qualified

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQJ840EP-T1_GE3-ND 1101739-SQJ840EP-T1_GE3 2088-SQJ840EP-T1_GE3 SQJ840EP-T1_GE3 26AK5827 880-SQJ840EP-T1_GE3 SQJ840EP-T1_GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ840EP-T1_GE3 N-Channel 30A 30V 0.0093ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 30A, Powerpak So Rohs Compliant Vishay MOSFET N-CH 30V 30A PPAK SO-8 MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAKR SO-8 TO-3
Transistor Grade / Operating Range Automotive
V(BR)DSS 30 volts 30 volts
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