Manufacturer: Vishay
Win Source Part Number: 1101739-SQJ840EP-T1_
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1900pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.3 mOhm @ 10.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
N-Channel 30V 30A (Tc) 46W (Tc) Surface Mount PowerPAK® SO-8
Power Field-Effect Transistor, 30A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ840EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 30V, 0.0093ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 30V, 0.0093ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQJ840EP-T1_GE3
MOSFET N-CH 30V 30A PPAK SO-8
MOSFET, N-CH, 30V, 30A, POWERPAK SO ROHS COMPLIANT: YES
MOSFET 30V 30A 46W AEC-Q101 Qualified
MOSFET N-CH 30V 30A PPAK SO-8
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1101739-SQJ840EP-T1_GE3 | SQJ840EP-T1_GE3-ND | 2088-SQJ840EP-T1_GE3 | 880-SQJ840EP-T1_GE3 | 26AK5827 | SQJ840EP-T1_GE3 | SQJ840EP-T1_GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ840EP-T1_GE3 | Single FETs, MOSFETs | N-Channel 30A 30V 0.0093ohm MOSFET Transistor | MOSFET N-CH 30V 30A PPAK SO-8 | Mosfet, N-Ch, 30V, 30A, Powerpak So Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 46000 milliwatts | 46000 milliwatts | 46000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
