Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R Product overview: SQJ488EP-T1_BE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ488EP-T1_BE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1277794-SQJ488EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQJ488EP-T1_BE3C
Base Product Number: SQJ488
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, N-CH, 100V, 42A, POWERPAK SO; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, N-CH, 100V, 42A, POWERPAK SO; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 100V 42A PPAK SO-8
MOSFET N-CH 100V 42A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ488EP-T1_BE3 | 742-SQJ488EP-T1_BE3DKR-ND | 1277794-SQJ488EP-T1_BE3 | 82AH6208 | SQJ488EP-T1_BE3 | SQJ488EP-T1_BE3 |
| Product Name | Automotive 100V 42A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 100V, 42A, Powerpak So; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 83000 milliwatts | 83000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | Tape and Reel | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | TO-3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 |
