Power Field-Effect Transistor, Product overview: SQJ476EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ476EP-T1_GE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 23A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 23A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 23A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1140738-SQJ476EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQJ476EP-T1-GE3; SQJ476EP-T1/GE3; SQJ476EPT1GE3;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJ476EP-T1_GE3DKR,S
Base Product Number: SQJ476
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 100V 23A PPAK SO-8
MOSFET N-CH 100V 23A PPAK SO-8
MOSFET, N-CH, 100V, 23A, 175DEG C, 45W ROHS COMPLIANT: YES
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ476EP-T1_GE3 | SQJ476EP-T1_GE3CT-ND | 1140738-SQJ476EP-T1_GE3 | SQJ476EP-T1_GE3 | SQJ476EP-T1_GE3 | 75AH9221 | SQJ476EP-T1_GE3 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 23A, 175Deg C, 45W Rohs Compliant Vishay | MOSFET |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| PD | 45000 milliwatts | 45000 milliwatts |
