Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ464EP-T2_GE3

Description
N-Channel 60V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 60V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 742-SQJ464EP-T2_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQJ464EP-T2_GE3TR-ND
Single FETs, MOSFETs 742-SQJ464EP-T2_GE3TR-ND
N-Channel 60V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 979863-SQJ464EP-T2_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
979863-SQJ464EP-T2_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 979863-SQJ464EP-T2_GE3
Win Source Part Number: 979863-SQJ464EP-T2_G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SQJ464EP-T2_GE3T R Base Product Number: SQJ464 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 979863-SQJ464EP-T2_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQJ464EP-T2_GE3TR
Base Product Number: SQJ464
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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Sheung Wan, Hong Kong
MOSFET 60V Vds 20V Vgs PowerPAK SO-8L

MOSFET 60V Vds 20V Vgs PowerPAK SO-8L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJ464EP-T2_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJ464EP-T2_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJ464EP-T2_GE3
MOSFET N-CH 60V 32A PPAK SO-8

MOSFET N-CH 60V 32A PPAK SO-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-SQJ464EP-T2_GE3TR-ND 979863-SQJ464EP-T2_GE3 SQJ464EP-T2_GE3 SQJ464EP-T2_GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3 SO-8; PowerPAKR SO-8
Transistor Grade / Operating Range Automotive
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