Power Field-Effect Transistor, 21.7A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ461EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 21.7A, 60V, 0.015ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 21.7A, 60V, 0.015ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ461EP-T1_GE3 can be used for catalog matching and distributor lookup.
P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Win Source Part Number: 795330-SQJ461EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Family Name: SQJ461EP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PowerPAK SO-8
Channel Type Type: P
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4710pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 83W (Tc)
Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 14.4A, 10V
Alternative Parts (Cross-Reference): TPCA8104(TE12L,Q); TPCA8104(TE12L,Q,M; TPCA8104; SQJ461EP-T1-GE3;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
MOSFET P-CH 60V 30A PPAK SO-8
MOSFET P-CH 60V 30A PPAK SO-8
MOSFET 60V 30A 83W AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ461EP-T1_GE3 | SQJ461EP-T1_GE3TR-ND | 795330-SQJ461EP-T1_GE3 | SQJ461EP-T1_GE3 | SQJ461EP-T1_GE3 | SQJ461EP-T1_GE3 |
| Product Name | P-Channel 21.7A 60V 0.015ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ461EP-T1_GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | ||
| Transistor Grade / Operating Range | Automotive | |||||
| PD | 83000 milliwatts | 83000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |