Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ461EP-T1_GE3

Description
MOSFET P-CH 60V 30A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET P-CH 60V 30A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQJ461EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJ461EP-T1_GE3
Single FETs, MOSFETs SQJ461EP-T1_GE3
MOSFET P-CH 60V 30A PPAK SO-8

MOSFET P-CH 60V 30A PPAK SO-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ461EP-T1_GE3 - 795330-SQJ461EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ461EP-T1_GE3
795330-SQJ461EP-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ461EP-T1_GE3 795330-SQJ461EP-T1_GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 795330-SQJ461EP-T1_G E3 Series: Automotive, AEC-Q101, TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Family Name: SQJ461EP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PowerPAK SO-8 Channel Type Type: P Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4710pF @ 30V Vgs (Maximum): ±20V Power Dissipation (Maximum): 83W (Tc) Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 14.4A, 10V Alternative Parts (Cross-Reference): TPCA8104(TE12L,Q); TPCA8104(TE12L,Q,M; TPCA8104; SQJ461EP-T1-GE3; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Vishay Siliconix
Win Source Part Number: 795330-SQJ461EP-T1_GE3
Series: Automotive, AEC-Q101, TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Family Name: SQJ461EP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PowerPAK SO-8
Channel Type Type: P
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4710pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 83W (Tc)
Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 14.4A, 10V
Alternative Parts (Cross-Reference): TPCA8104(TE12L,Q); TPCA8104(TE12L,Q,M; TPCA8104; SQJ461EP-T1-GE3;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
P-Channel 21.7A 60V 0.015ohm MOSFET Transistor
278-SQJ461EP-T1_GE3
P-Channel 21.7A 60V 0.015ohm MOSFET Transistor 278-SQJ461EP-T1_GE3
Power Field-Effect Transistor, 21.7A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ461EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 21.7A, 60V, 0.015ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 21.7A, 60V, 0.015ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ461EP-T1_GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 21.7A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ461EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 21.7A, 60V, 0.015ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 21.7A, 60V, 0.015ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ461EP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQJ461EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ461EP-T1_GE3TR-ND
Single FETs, MOSFETs SQJ461EP-T1_GE3TR-ND
P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJ461EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ461EP-T1_GE3DKR-ND
Single FETs, MOSFETs SQJ461EP-T1_GE3DKR-ND
P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJ461EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ461EP-T1_GE3CT-ND
Single FETs, MOSFETs SQJ461EP-T1_GE3CT-ND
P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJ461EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJ461EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJ461EP-T1_GE3
MOSFET P-CH 60V 30A PPAK SO-8

MOSFET P-CH 60V 30A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V 30A 83W AEC-Q101 Qualified

MOSFET 60V 30A 83W AEC-Q101 Qualified

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQJ461EP-T1_GE3 795330-SQJ461EP-T1_GE3 278-SQJ461EP-T1_GE3 SQJ461EP-T1_GE3TR-ND SQJ461EP-T1_GE3 SQJ461EP-T1_GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ461EP-T1_GE3 P-Channel 21.7A 60V 0.015ohm MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
IDSS 30000 milliamps
PD 83000 milliwatts 83000 milliwatts
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