Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ460AEP-T2_GE3

N-Channel 60V 58A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Win Source Part Number: 1095810-SQJ460AEP-T2_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2654 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQJ460AEP-T2_GE3SQJ460AEP-T2-GE3;
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQJ460AEP-T2_GE3TR
Base Product Number: SQJ460
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V