Power Field-Effect Transistor, 52A I(D), 60V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ459EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 52A, 60V, 0.018ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 52A, 60V, 0.018ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ459EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 52A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 934914-SQJ459EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 60 V 52A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ459
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ459EP-T1_GE3CT, SQJ459EP-T1_GE3DKR, SQJ459EP-T1_GE3TR
P-Channel 60V 52A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 52A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 52A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
MOSFET P-CH 60V 52A PPAK SO-8
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
MOSFET, P-CH, 60V, 52A, 175DEG C, 83W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:52A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:83W; No. of Pins:8Pins RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ459EP-T1_GE3 | SQJ459EP-T1_GE3 | 934914-SQJ459EP-T1_GE3 | SQJ459EP-T1_GE3TR-ND | SQJ459EP-T1_GE3 | SQJ459EP-T1_GE3 | 61AC2034 |
| Product Name | P-Channel 52A 60V 0.018ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ459EP-T1_GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 60V, 52A, 175Deg C, 83W; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | ||||||
| IDSS | 52000 milliamps | 52000 milliamps | |||||
| PD | 83000 milliwatts | 83000 milliwatts |
