P-CHANNEL 60-V (D-S) 175C MOSFET
Win Source Part Number: 1338133-SQJ457EP-T1_
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 68W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Trans MOSFET P-CH 60V 36A 5-Pin(4+Tab) PowerPAK SO T/R Automotive AEC-Q101 Product overview: SQJ457EP-T1_BE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ457EP-T1_BE3 can be used for catalog matching and distributor lookup.
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-CHANNEL 60-V (D-S) 175C MOSFET
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | SQJ457EP-T1_BE3 | 1338133-SQJ457EP-T1_BE3 | 278-SQJ457EP-T1_BE3 | 742-SQJ457EP-T1_BE3DKR-ND | SQJ457EP-T1_BE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Automotive 60V 36A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 60 volts | 60 volts | |||
| IDSS | 36000 milliamps | ||||
| PD | 68000 milliwatts | 68000 milliwatts | 68000 milliwatts |