Vishay Intertechnology, Inc. Automotive 100V 32A MOSFET Transistor SQJ456EP-T2_GE3

Trans MOSFET N-CH 100V 32A Automotive AEC-Q101 Product overview: SQJ456EP-T2_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ456EP-T2_GE3 can be used for catalog matching and distributor lookup.

N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Win Source Part Number: 1277818-SQJ456EP-T2_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3342 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: 742-SQJ456EP-T2_GE3TR
Base Product Number: SQJ456
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V