Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ456EP-T2_GE3

N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Win Source Part Number: 1277818-SQJ456EP-T2_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3342 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: 742-SQJ456EP-T2_GE3TR
Base Product Number: SQJ456
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V