Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ456EP-T1-GE3 SQJ456EP-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 042845-SQJ456EP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Family Name: SQJ456EP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 3342pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 9.3A, 10V
Alternative Parts (Cross-Reference): SQJ456EP-T1_GE3;
Introduction Date: August 25, 2009
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

MOSFET N-CH 100V 32A PPAK SO-8 / Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R Product overview: SQJ456EP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 32A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SQJ456EP-T1-GE3 can be used for catalog matching and distributor lookup.