Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ456EP-T1-GE3 SQJ456EP-T1-GE3

Manufacturer: Vishay Win Source Part Number: 042845-SQJ456EP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Family Name: SQJ456EP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 3342pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 9.3A, 10V Alternative Parts (Cross-Reference): SQJ456EP-T1_GE3; Introduction Date: August 25, 2009 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance