Win Source Part Number: 1277813-SQJ431EP-T2_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: 742-SQJ431EP-T2_GE3T
Base Product Number: SQJ431
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
MOSFET RECOMMENDED ALT 78-SQJ431AEP-T1_GE3
MOSFET P-CH 200V 12A PPAK SO-8
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277813-SQJ431EP-T2_GE3 | 742-SQJ431EP-T2_GE3TR-ND | SQJ431EP-T2_GE3 | SQJ431EP-T2_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel |
