MOSFET P-CH 200V 12A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 897238-SQJ431EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 200 V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ431
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ431EP-T1_GE3CT, SQJ431EP-T1_GE3TR, SQJ431EP-T1_GE3DKR
P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
P-Channel MOSFET, 200V, 12A, 0.221ohm, 4-Pin PowerPAK Product overview: SQJ431EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 200V, 12A, 0.221ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 12A, 0.221ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ431EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 200V 12A PPAK SO-8
MOSFET, AEC-Q101, P-CH, -200V, -12A; Channel Type:P Channel; Drain Source Voltage Vds:-200V; Continuous Drain Current Id:-12A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-3V; Power Dissipation:83W; No. of Pins:8PinsRoHS Compliant: Yes
MOSFET -200v -12A 83W AEC-Q101 Qualified
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJ431EP-T1_GE3 | 897238-SQJ431EP-T1_GE3 | SQJ431EP-T1_GE3CT-ND | 278-SQJ431EP-T1_GE3 | SQJ431EP-T1_GE3 | 96Y9632 | SQJ431EP-T1_GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ431EP-T1_GE3 | Single FETs, MOSFETs | P-Channel 200V 12A 0.221ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -200V, -12A; Channel Type Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 200 volts | ||||||
| IDSS | 12000 milliamps | -12000 milliamps | |||||
| PD | 83000 milliwatts | 83000 milliwatts |
