P-Channel 40V 55A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 40V 55A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 40V 55A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1316294-SQJ423EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJ423EP-T1_GE3DKR,S
Base Product Number: SQJ423
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
4-Terminal MOSFET, 175°C, Single Element Product overview: SQJ423EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQJ423EP-T1_GE3
MOSFET P-CH 40V 55A PPAK SO-8
MOSFET P-CH 40V 55A PPAK SO-8
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJ423EP-T1_GE3DKR-ND | 1316294-SQJ423EP-T1_GE3 | 2088-SQJ423EP-T1_GE3 | SQJ423EP-T1_GE3 | SQJ423EP-T1_GE3 | SQJ423EP-T1_GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 | ||
| Transistor Grade / Operating Range | Automotive | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
