Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQJ416EP-T1_GE3

Description
Win Source Part Number: 1111506-SQJ416EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 45W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SQJ416EP-T1-GE3; SQJ416EP-T1/GE3; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJ416EP-T1_GE3CT,SQ J416EP-T1_GE3DKR,SQJ 416EP-T1_GE3TR Base Product Number: SQJ416 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1111506-SQJ416EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 45W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SQJ416EP-T1-GE3; SQJ416EP-T1/GE3; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJ416EP-T1_GE3CT,SQ J416EP-T1_GE3DKR,SQJ 416EP-T1_GE3TR Base Product Number: SQJ416 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1111506-SQJ416EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1111506-SQJ416EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1111506-SQJ416EP-T1_GE3
Win Source Part Number: 1111506-SQJ416EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 45W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SQJ416EP-T1-GE3; SQJ416EP-T1/GE3; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQJ416EP-T1_GE3CT,SQ J416EP-T1_GE3DKR,SQJ 416EP-T1_GE3TR Base Product Number: SQJ416 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1111506-SQJ416EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQJ416EP-T1-GE3; SQJ416EP-T1/GE3;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJ416EP-T1_GE3CT,SQJ416EP-T1_GE3DKR,SQJ416EP-T1_GE3TR
Base Product Number: SQJ416
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SQJ416EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ416EP-T1_GE3TR-ND
Single FETs, MOSFETs SQJ416EP-T1_GE3TR-ND
N-Channel 100V 27A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 27A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJ416EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ416EP-T1_GE3DKR-ND
Single FETs, MOSFETs SQJ416EP-T1_GE3DKR-ND
N-Channel 100V 27A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 27A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SQJ416EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQJ416EP-T1_GE3CT-ND
Single FETs, MOSFETs SQJ416EP-T1_GE3CT-ND
N-Channel 100V 27A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 27A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
278-SQJ416EP-T1_GE3
MOSFET Transistor 278-SQJ416EP-T1_GE3
Power Field-Effect Transistor, Product overview: SQJ416EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ416EP-T1_GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SQJ416EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ416EP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQJ416EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQJ416EP-T1_GE3
Single FETs, MOSFETs SQJ416EP-T1_GE3
MOSFET N-CH 100V 27A PPAK SO-8

MOSFET N-CH 100V 27A PPAK SO-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJ416EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJ416EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJ416EP-T1_GE3
MOSFET N-CH 100V 27A PPAK SO-8

MOSFET N-CH 100V 27A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1111506-SQJ416EP-T1_GE3 SQJ416EP-T1_GE3TR-ND 278-SQJ416EP-T1_GE3 SQJ416EP-T1_GE3 SQJ416EP-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 45000 milliwatts 45000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 SO-8; PowerPAKR SO-8
Transistor Grade / Operating Range Automotive
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