Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ415EP-T1_BE3

P-Channel MOSFET with a 40 V drain-source voltage rating, capable of 30 A continuous drain current at 25 °C, housed in a PowerPAK SO-8L package. It has a drain-source on-resistance of 0.0140 Ω at -10 V gate-source voltage and 0.0200 Ω at -4.5 V gate-source voltage. The device is AEC-Q101 qualified, operates from -55 °C to +175 °C, and has a maximum power dissipation of 45 W at 25 °C. Junction-to-ambient thermal resistance is 70 °C/W when mounted on a 1" square FR4 PCB.