Win Source Part Number: 1277816-SQJ412EP-T2_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: 742-SQJ412EP-T2_GE3T
Base Product Number: SQJ412
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 40V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 40V 32A PPAK SO-8
MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3
| Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277816-SQJ412EP-T2_GE3 | 742-SQJ412EP-T2_GE3TR-ND | SQJ412EP-T2_GE3 | SQJ412EP-T2_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
