P-CHANNEL 40-V (D-S) 175C MOSFET Product overview: SQJ409EP-T2_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ409EP-T2_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1135081-SQJ409EP-T2_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQJ409EP-T2-GE3;
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQJ409EP-T2_GE3T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-CHANNEL 40-V (D-S) 175C MOSFET
P-CHANNEL 40-V (D-S) 175C MOSFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ409EP-T2_GE3 | 1135081-SQJ409EP-T2_GE3 | 742-SQJ409EP-T2_GE3CT-ND | SQJ409EP-T2_GE3 | SQJ409EP-T2_GE3 |
| Product Name | P-Channel MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |
| MOSFET Operating Mode | Enhancement | ||||
| PD | 68 milliwatts | 68000 milliwatts | 68000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tape & Reel (TR) | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 |
