Win Source Part Number: 980678-SQJ409EP-T1_G
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJ409EP-T1_GE3DKR,S
Base Product Number: SQJ409
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
MOSFET P-CH 40V 60A PPAK SO-8
MOSFET -40V Vds PowerPAK AEC-Q101 Qualified
PowerPAK-SO-8L MOSFETs ROHS
MOSFET P-CH 40V 60A PPAK SO-8
MOSFET, AEC-Q101, P-CH, -40V/POWERPAK SO; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-60A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V; Power Dissipation:68W RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 980678-SQJ409EP-T1_GE3 | SQJ409EP-T1_GE3DKR-ND | SQJ409EP-T1_GE3 | SQJ409EP-T1_GE3 | SQJ409EP-T1_GE3 | SQJ409EP-T1_GE3 | 15AC8696 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -40V/powerpak So; Channel Type Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| PD | 68000 milliwatts | 68000 milliwatts | 68000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 | ||
| Transistor Grade / Operating Range | Automotive |
