Power Field-Effect Transistor, 60A I(D), 40V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJ409EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60A, 40V, 0.007ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60A, 40V, 0.007ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ409EP-T1_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 980678-SQJ409EP-T1_G
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJ409EP-T1_GE3DKR,S
Base Product Number: SQJ409
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET P-CH 40V 60A PPAK SO-8
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
PowerPAK-SO-8L MOSFETs ROHS
MOSFET P-CH 40V 60A PPAK SO-8
MOSFET, AEC-Q101, P-CH, -40V/POWERPAK SO; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-60A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V; Power Dissipation:68W RoHS Compliant: Yes
MOSFET -40V Vds PowerPAK AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ409EP-T1_GE3 | 980678-SQJ409EP-T1_GE3 | SQJ409EP-T1_GE3 | SQJ409EP-T1_GE3DKR-ND | SQJ409EP-T1_GE3 | SQJ409EP-T1_GE3 | 15AC8696 | SQJ409EP-T1_GE3 |
| Product Name | P-Channel 60A 40V 0.007ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -40V/powerpak So; Channel Type Vishay | MOSFET |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | |||||
| PD | 68000 milliwatts | 68000 milliwatts | 68000 milliwatts | |||||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
