Vishay Intertechnology, Inc. P-Channel 30A 30V 0.0085ohm MOSFET Transistor SQJ403BEEP-T1_GE3

Power Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJ403BEEP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30A, 30V, 0.0085ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 30V, 0.0085ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ403BEEP-T1_GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1005387-SQJ403BEEP-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 164nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

P-Channel 30V 30A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 30V 30A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 30V 30A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8