100V 32A N-CH MOSFET, 11mR RDS(on), 83W PD, Surface Mount Product overview: SQJ402EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 32A, 83W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 32A, 83W, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ402EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 32A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 934908-SQJ402EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8 Dual
Package: PowerPAK® SO-8 Dual
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ402
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ402EP-T1_GE3DKR, SQJ402EP-T1_GE3CT, SQJ402EP-T1_GE3TR
N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
MOSFET 100V 32A 27watt AEC-Q101 Qualified
MOSFET, N-CH, 100V, 32A, 175DEG C, 83W ROHS COMPLIANT: YES
N-CHANNEL 100-V (D-S) 175C MOSFET
MOSFET N-CH 100V 32A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQJ402EP-T1_GE3 | SQJ402EP-T1_GE3 | 934908-SQJ402EP-T1_GE3 | SQJ402EP-T1_GE3DKR-ND | SQJ402EP-T1_GE3 | 75AH9216 | 26AK9936 | SQJ402EP-T1_GE3 |
| Product Name | SMD 100V 32A 83W MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ402EP-T1_GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 32A, 175Deg C, 83W Rohs Compliant Vishay | N-Channel 100-V (D-S) 175C Mosfet Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 83000 milliwatts | 83000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts |
