Mosfet Array 2 N-Channel (Dual) 60V 15A (Tc), 40A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric
Mosfet Array 2 N-Channel (Dual) 60V 15A (Tc), 40A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric
Mosfet Array 2 N-Channel (Dual) 60V 15A (Tc), 40A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric
MOSFET 2 N-CH 60V POWERPAK SO8
Win Source Part Number: 1278527-SQJ262EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 27W (Tc), 48W (Tc)
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJ262EP-T1_GE3CT,SQ
Base Product Number: SQJ262
DUAL N-CHANNEL 60-V (D-S) 175C MOSFET Automotive AEC-Q101 Product overview: SQJ262EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, Dual. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, Dual, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ262EP-T1_GE3 can be used for catalog matching and distributor lookup.
MOSFET, AEC-Q101, 60V, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified
MOSFET 2N-CH 60V 15A PPAK SO8
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQJ262EP-T1_GE3DKR-ND | SQJ262EP-T1_GE3 | 1278527-SQJ262EP-T1_GE3 | 278-SQJ262EP-T1_GE3 | 32AC8409 | SQJ262EP-T1_GE3 | SQJ262EP-T1_GE3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Automotive N-Channel Dual MOSFET Transistor | Mosfet, Aec-Q101, 60V, Powerpak So; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SO-8; PowerPAK® SO-8 Dual | SO-8; PowerPAK® SO-8 Dual | SO-8; SOT3 | Tape and Reel | TO-3 | Automotive | |
| Transistor Grade / Operating Range | Automotive | ||||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts |
