The SQJ202EP-T2_GE3 is an automotive-grade dual N-channel MOSFET in a PowerPAK SO-8L Dual Asymmetric package, rated for 12 V drain-source voltage and an operating junction temperature range of -55 °C to +175 °C. The device meets AEC-Q101 qualification standards and features on-state resistance values of 0.0065 Ω and 0.0033 Ω at 10 V gate-source voltage for the two channels, with continuous drain currents of 20 A and 60 A, respectively. The package measures 5.13 mm by 6.15 mm and is designed for surface mounting with a leadless configuration. Both channels are 100 % Rg and UIS tested and comply with RoHS standards for material categorization.
Mosfet Array 2 N-Channel (Dual) 12V 20A (Tc), 60A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 742-SQJ202EP-T2_GE3TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | SO-8; PowerPAK® SO-8 Dual |
