Vishay Precision Group FET, MOSFET Arrays SQJ202EP-T1_GE3

Description
MOSFET 2N-CH 12V 20A/60A PPAK SO
Request a Quote Datasheet
Description
MOSFET 2N-CH 12V 20A/60A PPAK SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SQJ202EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SQJ202EP-T1_GE3
FET, MOSFET Arrays SQJ202EP-T1_GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO

MOSFET 2N-CH 12V 20A/60A PPAK SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1324130-SQJ202EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1324130-SQJ202EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1324130-SQJ202EP-T1_GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 1324130-SQJ202EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power - Max: 27W, 48W Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: PowerPAK® SO-8 Dual ECCN: EAR99 Fake Threat In the Open Market: 68 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: SQJ202EP-T1_GE3DKR,S QJ202EP-T1_GE3TR,SQJ 202EP-T1_GE3CT Base Product Number: SQJ202 RoHS Status: ROHS3 Compliant

Manufacturer: Vishay Siliconix
Win Source Part Number: 1324130-SQJ202EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 27W, 48W
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SQJ202EP-T1_GE3DKR,SQJ202EP-T1_GE3TR,SQJ202EP-T1_GE3CT
Base Product Number: SQJ202
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
FET, MOSFET Arrays - 742-SQJ202EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SQJ202EP-T1_GE3TR-ND
FET, MOSFET Arrays 742-SQJ202EP-T1_GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Buy Now Datasheet
FET, MOSFET Arrays - 742-SQJ202EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SQJ202EP-T1_GE3DKR-ND
FET, MOSFET Arrays 742-SQJ202EP-T1_GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Buy Now Datasheet
FET, MOSFET Arrays - 742-SQJ202EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SQJ202EP-T1_GE3CT-ND
FET, MOSFET Arrays 742-SQJ202EP-T1_GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Buy Now Datasheet
MOSFET Transistor 278-SQJ202EP-T1_GE3
Power Field-Effect Transistor, Product overview: SQJ202EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ202EP-T1_GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SQJ202EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ202EP-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified

MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJ202EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJ202EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJ202EP-T1_GE3
MOSFET 2N-CH 12V 20A PPAK SO8

MOSFET 2N-CH 12V 20A PPAK SO8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQJ202EP-T1_GE3 1324130-SQJ202EP-T1_GE3 742-SQJ202EP-T1_GE3TR-ND 278-SQJ202EP-T1_GE3 SQJ202EP-T1_GE3 SQJ202EP-T1_GE3
Product Name FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts
IDSS 20000 milliamps
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