Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays SQJ202EP-T1_GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1324130-SQJ202EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power - Max: 27W, 48W Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: PowerPAK® SO-8 Dual ECCN: EAR99 Fake Threat In the Open Market: 68 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: SQJ202EP-T1_GE3DKR,S QJ202EP-T1_GE3TR,SQJ 202EP-T1_GE3CT Base Product Number: SQJ202 RoHS Status: ROHS3 Compliant
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1324130-SQJ202EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power - Max: 27W, 48W Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: PowerPAK® SO-8 Dual ECCN: EAR99 Fake Threat In the Open Market: 68 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: SQJ202EP-T1_GE3DKR,S QJ202EP-T1_GE3TR,SQJ 202EP-T1_GE3CT Base Product Number: SQJ202 RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1324130-SQJ202EP-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1324130-SQJ202EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1324130-SQJ202EP-T1_GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 1324130-SQJ202EP-T1_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power - Max: 27W, 48W Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: PowerPAK® SO-8 Dual ECCN: EAR99 Fake Threat In the Open Market: 68 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: SQJ202EP-T1_GE3DKR,S QJ202EP-T1_GE3TR,SQJ 202EP-T1_GE3CT Base Product Number: SQJ202 RoHS Status: ROHS3 Compliant

Manufacturer: Vishay Siliconix
Win Source Part Number: 1324130-SQJ202EP-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 27W, 48W
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SQJ202EP-T1_GE3DKR,SQJ202EP-T1_GE3TR,SQJ202EP-T1_GE3CT
Base Product Number: SQJ202
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
FET, MOSFET Arrays - SQJ202EP-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SQJ202EP-T1_GE3
FET, MOSFET Arrays SQJ202EP-T1_GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO

MOSFET 2N-CH 12V 20A/60A PPAK SO

Supplier's Site Datasheet
FET, MOSFET Arrays - 742-SQJ202EP-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SQJ202EP-T1_GE3TR-ND
FET, MOSFET Arrays 742-SQJ202EP-T1_GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Buy Now Datasheet
FET, MOSFET Arrays - 742-SQJ202EP-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SQJ202EP-T1_GE3DKR-ND
FET, MOSFET Arrays 742-SQJ202EP-T1_GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Buy Now Datasheet
FET, MOSFET Arrays - 742-SQJ202EP-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SQJ202EP-T1_GE3CT-ND
FET, MOSFET Arrays 742-SQJ202EP-T1_GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQJ202EP-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQJ202EP-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQJ202EP-T1_GE3
MOSFET 2N-CH 12V 20A PPAK SO8

MOSFET 2N-CH 12V 20A PPAK SO8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified

MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324130-SQJ202EP-T1_GE3 SQJ202EP-T1_GE3 742-SQJ202EP-T1_GE3TR-ND SQJ202EP-T1_GE3 SQJ202EP-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SO-8; SOT3; PowerPAK® SO-8 Dual SO-8; PowerPAK® SO-8 Dual SO-8; PowerPAK® SO-8 Dual SO-8; PowerPAKR SO-8 Dual
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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