Power Field-Effect Transistor, Product overview: SQJ202EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ202EP-T1_GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric
Mosfet Array 2 N-Channel (Dual) 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric
Manufacturer: Vishay Siliconix
Win Source Part Number: 1324130-SQJ202EP-T1_
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 27W, 48W
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SQJ202EP-T1_GE3DKR,S
Base Product Number: SQJ202
RoHS Status: ROHS3 Compliant
MOSFET 2N-CH 12V 20A/60A PPAK SO
MOSFET 2N-CH 12V 20A PPAK SO8
MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ202EP-T1_GE3 | 742-SQJ202EP-T1_GE3TR-ND | 1324130-SQJ202EP-T1_GE3 | SQJ202EP-T1_GE3 | SQJ202EP-T1_GE3 | SQJ202EP-T1_GE3 |
| Product Name | MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | SO-8; PowerPAK® SO-8 Dual | SO-8; SOT3; PowerPAK® SO-8 Dual | SO-8; PowerPAK® SO-8 Dual | SO-8; PowerPAKR SO-8 Dual | ||
| Transistor Grade / Operating Range | Automotive | |||||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
