Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ180EP-T1_GE3

N-Channel 80V 248A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 248A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 248A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

Win Source Part Number: 1338507-SQJ180EP-T1_GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Automotive, AEC-Q101, TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Power Dissipation (Max): 500W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 44 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 248A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 25 V

MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET Product overview: SQJ180EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQJ180EP-T1_GE3 can be used for catalog matching and distributor lookup.