Vishay Intertechnology, Inc. Single FETs, MOSFETs SQJ134ELR-T1_GE3

SQJ134ELR-T1_GE3 is an automotive-grade N-channel MOSFET with a 40 V drain-source voltage rating and a PowerPAK SO-10LR package measuring 5.3 mm by 6.3 mm. It features a TrenchFET Gen IV design with a continuous drain current of 396 A at 25 °C and a maximum operating junction temperature of 175 °C. The device has a maximum on-state resistance of 0.00142 Ω at V_GS = 4.5 V and 0.00106 Ω at V_GS = 10 V, with a junction-to-ambient thermal resistance of 42 °C/W on a 1" square FR4 PCB. It meets the absolute maximum ratings for gate-source voltage of ±20 V and single pulse avalanche energy of 186 mJ. The part is lead-free and halogen-free.