Vishay Intertechnology, Inc. MOSFET SQD97N06-6m3L_GE3

Description
MOSFET 60V 97A 136W AEC-Q101 Qualified
Description
MOSFET 60V 97A 136W AEC-Q101 Qualified
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Automotive-grade N-channel 60 V MOSFET in a TO-252 package, rated for continuous drain current of 97 A at 25 °C and 56 A at 125 °C, with a maximum junction temperature of 175 °C. It features a typical on-state resistance of 0.0063 Ω at V_GS = 10 V and 0.0069 Ω at V_GS = 4.5 V, and is AEC-Q101 qualified. The device has a junction-to-case thermal resistance of 1.1 °C/W and is mounted on a PCB with drain connected to the tab.

Datasheet Summary
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Automotive-grade N-channel 60 V MOSFET in a TO-252 package, rated for continuous drain current of 97 A at 25 °C and 56 A at 125 °C, with a maximum junction temperature of 175 °C. It features a typical on-state resistance of 0.0063 Ω at V_GS = 10 V and 0.0069 Ω at V_GS = 4.5 V, and is AEC-Q101 qualified. The device has a junction-to-case thermal resistance of 1.1 °C/W and is mounted on a PCB with drain connected to the tab.

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MOSFET 60V 97A 136W AEC-Q101 Qualified

MOSFET 60V 97A 136W AEC-Q101 Qualified

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQD97N06-6m3L_GE3
Product Name MOSFET
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