Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD90P04-9M4L_GE3 SQD90P04-9M4L_GE3

Description
Manufacturer: Vishay Win Source Part Number: 1101736-SQD90P04-9M4 L_GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 6675pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.4 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1101736-SQD90P04-9M4 L_GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 6675pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.4 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD90P04-9M4L_GE3 - 1101736-SQD90P04-9M4L_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD90P04-9M4L_GE3
1101736-SQD90P04-9M4L_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD90P04-9M4L_GE3 1101736-SQD90P04-9M4L_GE3
Manufacturer: Vishay Win Source Part Number: 1101736-SQD90P04-9M4 L_GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 6675pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.4 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101736-SQD90P04-9M4L_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 6675pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.4 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SQD90P04-9M4L_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQD90P04-9M4L_GE3
Single FETs, MOSFETs SQD90P04-9M4L_GE3
MOSFET P-CH 40V 90A TO252AA

MOSFET P-CH 40V 90A TO252AA

Supplier's Site Datasheet
Singapore
40V 90A MOSFET Transistor
278-SQD90P04-9M4L_GE3
40V 90A MOSFET Transistor 278-SQD90P04-9M4L_GE3
MOSFET P-CH 40V 90A TO252AA Product overview: SQD90P04-9M4L_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD90P04-9M4L_GE 3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 90A TO252AA Product overview: SQD90P04-9M4L_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD90P04-9M4L_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQD90P04-9M4L_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD90P04-9M4L_GE3TR-ND
Single FETs, MOSFETs SQD90P04-9M4L_GE3TR-ND
P-Channel 40V 90A (Tc) 136W (Tc) Surface Mount TO-252AA

P-Channel 40V 90A (Tc) 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SQD90P04-9M4L_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD90P04-9M4L_GE3CT-ND
Single FETs, MOSFETs SQD90P04-9M4L_GE3CT-ND
P-Channel 40V 90A (Tc) 136W (Tc) Surface Mount TO-252AA

P-Channel 40V 90A (Tc) 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQD90P04-9M4L_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQD90P04-9M4L_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQD90P04-9M4L_GE3
MOSFET P-CH 40V 90A TO252AA

MOSFET P-CH 40V 90A TO252AA

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1101736-SQD90P04-9M4L_GE3 SQD90P04-9M4L_GE3 278-SQD90P04-9M4L_GE3 SQD90P04-9M4L_GE3TR-ND SQD90P04-9M4L_GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD90P04-9M4L_GE3 Single FETs, MOSFETs 40V 90A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 40 volts 40 volts
PD 136000 milliwatts 136000 milliwatts 136 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); TO-252AA TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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