P-Channel MOSFET, 60V, 50A, 0.0155 Ohm, TO-252 Product overview: SQD50P06-15L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V, 50A, 0.0155 Ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50A, 0.0155 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD50P06-15L_GE3
MOSFET P-CH 60V 50A TO252
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
P-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
P-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
P-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
Manufacturer: Vishay
Win Source Part Number: 1101735-SQD50P06-15L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 5910pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
MOSFET P-CH 60V 50A TO252
MOSFET 60V 50A 136W AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQD50P06-15L_GE3 | SQD50P06-15L_GE3 | 1807967P | SQD50P06-15L_GE3TR-ND | 1101735-SQD50P06-15L_GE3 | SQD50P06-15L_GE3 | SQD50P06-15L_GE3 |
| Product Name | P-Channel 60V 50A 0.0155 Ohm MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD50P06-15L_GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 50000 milliamps | ||||||
| PD | 136000 milliwatts | 136000 milliwatts |
